sb120 ? SB1100 features ! schottky barrier chip ! guard ring die construction for transient protection ! high current capability a b a ! low power loss, high efficiency ! high surge current capability ! for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications c d mechanical data ! case: do-41, molded plastic ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 0.34 grams (approx.) ! mounting position: any ! marking: type number ! lead free: for rohs / lead free version, add ?-lf? suffix to part number, see page 4 maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol sb120 sb130 sb140 sb150 sb160 sb180 SB1100 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 80 100 v rms reverse voltage v r(rms) 14 21 28 35 42 56 70 v average rectified output current @t l = 100c (note 1) i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 40 a forward voltage @i f = 1.0a v fm 0.50 0.70 0.85 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.5 10 ma typical junction capacitance (note 2) c j 110 80 pf typical thermal resistance (note 1) r jl r ja 15 50 c/w operating and storage temperature range t j , t stg -65 to +150 c note: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. do-41 dim min max a 25.4 ? b 4.06 5.21 c 0.71 0.864 d 2.00 2.72 all dimensions in mm 1.0a axial leaded schottky barrier diode 1of2
10 20 30 40 0 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60 hz fig. 3 max non-repetitive peak fwd surge current single half sine-wave (jedec method) t = 150 c j 10 100 1000 0.1 1 10 100 c , junction capacitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r sb15 0- sb1 10 0 sb120 - sb140 t = 25 c f = 1.0mhz j 0 20 40 60 80 100 120 140 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 100 c j t = 75 c j t = 25 c j 100 10 1.0 0.1 0.01 0.001 0.1 1.0 10 i , instantaneous forward current (a) f v , ins t an t aneou s fo r w ar d vo l t ag e (v) fig . 2 t ypica l forwar d characteristics f 20 0. 2 0. 0 0. 4 0 . 6 0 . 8 1 . 0 t = 2 5 c j i pulse width = 300 s f m sb15 0 - sb160 sb120 - sb140 0 0.5 1.0 25 50 75 100 125 150 i average forward current (a) (o), t , lead temperature ( c) fig. 1 forward current derating curve l sb1 8 0 - sb 1 1 0 0 2of2
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